IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
• Low gate charge Qg results in cimple drive
requirement
D
D2PAK (TO-263)
I2PAK (TO-262)
Available
• Improved gate, avalanche, and dynamic dV/dt
ruggedness
G
G
D
S
Available
• Fully characterized capacitance and avalanche
voltage and current
D
S
G
• Effective Coss specified
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
N-Channel MOSFET
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
400
RDS(on) (Ω)
VGS = 10 V
0.55
Qg (Max.) (nC)
36
9.9
16
APPLICATIONS
Q
gs (nC)
gd (nC)
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
Q
Configuration
Single
TYPICAL SMPS TOPOLOGIES
• Single transistor flyback Xfmr. reset
• Single transistor forward Xfmr. reset (both for US line
input only)
ORDERING INFORMATION
Package
D2PAK (TO-263)
SiHF740AS-GE3
IRF740ASPbF
D2PAK (TO-263)
SiHF740ASTRL-GE3a
IRF740ASTRLPbFa
D2PAK (TO-263)
SiHF740ASTRR-GE3a
IRF740ASTRRPbFa
I2PAK (TO-262)
SiHF740AL-GE3
IRF740ALPbF
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
400
30
V
TC = 25 °C
C = 100 °C
10
Continuous Drain Currente
VGS at 10 V
ID
T
6.3
40
A
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
IDM
1.0
630
10
W/°C
mJ
A
EAS
IAR
Repetiitive Avalanche Energya
EAR
12.5
3.1
125
5.9
mJ
TA = 25 °C
C = 25 °C
Maximum Power Dissipation
PD
W
T
Peak Diode Recovery dV/dtc, e
dV/dt
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 150
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 12.6 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12)
c. ISD ≤ 10 A, dI/dt ≤ 330 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. Uses IRF740A, SiHF740A data and test conditions
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91052
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000