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IRF5Y9540CM PDF预览

IRF5Y9540CM

更新时间: 2024-11-19 22:10:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 106K
描述
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)

IRF5Y9540CM 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.21Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):256 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):18 A最大漏极电流 (ID):18 A
最大漏源导通电阻:0.117 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-257AAJESD-30 代码:R-MSFM-P3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):75 W最大脉冲漏极电流 (IDM):72 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF5Y9540CM 数据手册

 浏览型号IRF5Y9540CM的Datasheet PDF文件第2页浏览型号IRF5Y9540CM的Datasheet PDF文件第3页浏览型号IRF5Y9540CM的Datasheet PDF文件第4页浏览型号IRF5Y9540CM的Datasheet PDF文件第5页浏览型号IRF5Y9540CM的Datasheet PDF文件第6页浏览型号IRF5Y9540CM的Datasheet PDF文件第7页 
PD - 94027A  
HEXFET® POWER MOSFET  
THRU-HOLE (TO-257AA)  
IRF5Y9540CM  
100V, P-CHANNEL  
Product Summary  
Part Number  
BV  
RDS(on)  
ID  
DSS  
IRF5Y9540CM  
-100V  
0.117-18A  
Fifth Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievethelowestpossibleon-resistance  
per silicon unit area. This benefit, combined with the  
fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
providesthedesignerwithanextremelyefficientdevice  
for use in a wide variety of applications.  
TO-257AA  
Features:  
n
n
n
n
n
n
n
Low RDS(on)  
Avalanche Energy Ratings  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
These devices are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= -10V, T = 25°C Continuous Drain Current  
-18  
-11  
D
GS  
C
A
I
D
= -10V, T = 100°C Continuous Drain Current  
C
GS  
I
Pulsed Drain Current  
Max. Power Dissipation  
-72  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
256  
mJ  
A
AS  
I
-11  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
4.4  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10sec)  
4.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
11/17/00  

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