是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.21 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 256 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 18 A | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.117 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AA | JESD-30 代码: | R-MSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 75 W | 最大脉冲漏极电流 (IDM): | 72 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF5Y9540CMSCV | INFINEON |
获取价格 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TXV | |
IRF5YZ48CM | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*) | |
IRF60B217 | INFINEON |
获取价格 |
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil | |
IRF60DM206 | INFINEON |
获取价格 |
Brushed motor drive applications | |
IRF60DM206_15 | INFINEON |
获取价格 |
Brushed motor drive applications | |
IRF60R217 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 58A I(D), 60V, 0.0099ohm, 1-Element, N-Channel, Silicon, Me | |
IRF60SC241 | INFINEON |
获取价格 |
Infineon’s latest 60 V StrongIRFET??power MOS | |
IRF610 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Me | |
IRF610 | FAIRCHILD |
获取价格 |
N-Channel Power MOSFETs, 3.5A, 150-200V | |
IRF610 | VISHAY |
获取价格 |
Power MOSFET |