Datasheet > IRF60B217

IRF60B217

更新时间： 2024-10-03 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	227K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRF60B217 数据手册

IR MOSFET

StrongIRFET™

IRF60B217

HEXFET^®Power MOSFET

Application

V_DSS

60V

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

R_DS(on)typ.

max

7.3m

9.0m

60A

I_D

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free*

TO-220AB

IRF60B217

 RoHS Compliant, Halogen-Free

Gate

Drain

Source

Standard Pack

Form

Base part number

Package Type

Orderable Part Number

Quantity

IRF60B217

TO-220

Tube

IRF60B217

= 36A

T = 125°C

T = 25°C

100

125

150

175

, Gate-to-Source Voltage (V)

, CaseTemperature (°C)

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

2016– 01-05

12 3 4 5 6 7...10

中文翻译

下载PDF

IRF60B217 替代型号

型号	品牌	替代类型	描述	数据表
IRF60R217	INFINEON	功能相似	Power Field-Effect Transistor, 58A I(D), 60V, 0.0099ohm, 1-Element, N-Channel, Silicon, Me

与IRF60B217相关器件

型号	品牌	获取价格	描述	数据表
IRF60DM206	INFINEON	获取价格	Brushed motor drive applications
IRF60DM206_15	INFINEON	获取价格	Brushed motor drive applications
IRF60R217	INFINEON	获取价格	Power Field-Effect Transistor, 58A I(D), 60V, 0.0099ohm, 1-Element, N-Channel, Silicon, Me
IRF60SC241	INFINEON	获取价格	Infineon’s latest 60 V StrongIRFET??power MOS
IRF610	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Me
IRF610	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 3.5A, 150-200V
IRF610	VISHAY	获取价格	Power MOSFET
IRF610	INTERSIL	获取价格	3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
IRF610	NJSEMI	获取价格	Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB
IRF6100	INFINEON	获取价格	HEXFET Power MOSFET