Datasheet > IRF3808S (KRF3808S)

IRF3808S (KRF3808S)

更新时间： 2024-10-15 18:09:31

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科信 - KEXIN		/
页数	文件大小	规格书
8页	239K
描述
N-Channel MOSFET

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数据手册

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IRF3808S (KRF3808S) 数据手册

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SMD Type

MOSFET

Transistors

N-Channel MOSFET

IRF3808S (KRF3808S)

Ƶ Features

ƽ VDSS = 75V

ƽ RDS(ON) = ꢀ.ꢀꢀ7

ƽ ID = 1ꢀ6A ļ

ƽ Advanced Process Technology

ƽ Ultra Low On-Resistance

ƽ Dynamic dv/dt Rating

ƽ 175°C Operating Temperature

ƽ Fast Switching

ƽ Repetitive Avalanche Allowed up to Tjmax

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Drain-Source Voltage

Symbol

Rating

2ꢀ

Unit

VDS

Gate-Source Voltage

=25ć

1ꢀ6 ļ

Continuous Drain Current, VGS @ 1ꢀV

=1ꢀꢀć

75 ļ

Pulsed Drain Current ķ

55ꢀ

Power Dissipation

2ꢀꢀ

TC=25ć

43ꢀ

Single Pulse Avalanche Energy ĸ

Avalanche Current ķ

IAR

See Fig.12a, 12b, 15, 16

V/ns

Repetitive Avalanche Energy Ľ

Peak Diode Recovery dv/dt Ĺ

Thermal Resistance Junction-to-Case

dv/dt

5.5

thJC

ꢀ.75

ć/W

Thermal Resistance.Junction- to-Ambient

(PCB Mounted, Steady State) **

RthJA

4ꢀ

Junction Temperature

175

Storage Temperature Range

Tstg

-55 to 175

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