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IPP80N04S306AKSA1 PDF预览

IPP80N04S306AKSA1

更新时间: 2024-11-23 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
9页 191K
描述
Power Field-Effect Transistor, 80A I(D), 40V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP80N04S306AKSA1 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:5.63
Is Samacsys:N其他特性:ULTRA LOW RESISTANCE
雪崩能效等级(Eas):125 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0057 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):320 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPP80N04S306AKSA1 数据手册

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IPB80N04S3-06  
IPI80N04S3-06, IPP80N04S3-06  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
40  
5.4  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green package (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
3N0406  
3N0406  
3N0406  
IPB80N04S3-06  
IPI80N04S3-06  
IPP80N04S3-06  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
T C=25°C, VGS=10V1)  
I D  
Continuous drain current  
80  
A
T C=100 °C,  
V
71  
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25 °C  
I D=80 A  
320  
125  
Avalanche energy, single pulse  
Gate source voltage  
mJ  
V
VGS  
±20  
Ptot  
T C=25 °C  
Power dissipation  
100  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.1  
page 1  
2007-05-03  

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