Datasheet > IPP80N04S2-H4

IPP80N04S2-H4

更新时间： 2024-11-23 03:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	160K
描述
OptiMOS㈢ Power-Transistor

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中文翻译

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数据手册

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IPP80N04S2-H4 数据手册

IPB80N04S2-H4

IPP80N04S2-H4, IPI80N04S2-H4

OptiMOS^®Power-Transistor

Product Summary

V_DS

Features

3.7

• N-channel - Enhancement mode

_DS(on),max(SMD version)

mΩ

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• Ultra low Rds(on)

I _D

PG-TO263-3-2

PG-TO220-3-1

PG-TO262-3-1

• 100% Avalanche tested

Type

Package

Ordering Code Marking

IPB80N04S2-H4

IPP80N04S2-H4

IPI80N04S2-0H4

PG-TO263-3-2

PG-TO220-3-1

PG-TO262-3-1

SP0002-18165

SP0002-18169

SP0002-18171

2N04H4

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

_GS=10 V²⁾

Pulsed drain current²⁾

Avalanche energy, single pulse²⁾

Gate source voltage⁴⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=80A

320

660

V_GS

±20

P_tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2006-03-02

12 3 4 5 6 7 8

中文翻译

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