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IPP80N03S4L-04 PDF预览

IPP80N03S4L-04

更新时间: 2024-11-23 05:39:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
9页 189K
描述
OptiMOS-T2 Power-Transistor

IPP80N03S4L-04 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:GREEN, PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.3Is Samacsys:N
其他特性:ULTRA LOW RESISTANCE雪崩能效等级(Eas):95 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0037 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):94 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPP80N03S4L-04 数据手册

 浏览型号IPP80N03S4L-04的Datasheet PDF文件第2页浏览型号IPP80N03S4L-04的Datasheet PDF文件第3页浏览型号IPP80N03S4L-04的Datasheet PDF文件第4页浏览型号IPP80N03S4L-04的Datasheet PDF文件第5页浏览型号IPP80N03S4L-04的Datasheet PDF文件第6页浏览型号IPP80N03S4L-04的Datasheet PDF文件第7页 
IPB80N03S4L-03  
IPI80N03S4L-04, IPP80N03S4L-04  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
30  
3.3  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• Ultra low Rds(on)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB80N03S4L-03  
IPI80N03S4L-04  
IPP80N03S4L-04  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
4N03L03  
4N03L04  
4N03L04  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
80  
80  
A
V
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25 °C  
I D=80 A  
320  
95  
Avalanche energy, single pulse  
Avalanche current, single pulse  
Gate source voltage  
mJ  
A
I AS  
T C=25 °C  
80  
VGS  
±16  
94  
V
Ptot  
T C=25 °C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
°C  
Rev. 2.0  
page 1  
2007-03-09  

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