5秒后页面跳转
IPP04CNE8NG PDF预览

IPP04CNE8NG

更新时间: 2024-11-20 05:39:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 414K
描述
OptiMOS™2 Power-Transistor

IPP04CNE8NG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
雪崩能效等级(Eas):1000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:85 V
最大漏极电流 (ID):100 A最大漏源导通电阻:0.0042 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):400 A
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPP04CNE8NG 数据手册

 浏览型号IPP04CNE8NG的Datasheet PDF文件第2页浏览型号IPP04CNE8NG的Datasheet PDF文件第3页浏览型号IPP04CNE8NG的Datasheet PDF文件第4页浏览型号IPP04CNE8NG的Datasheet PDF文件第5页浏览型号IPP04CNE8NG的Datasheet PDF文件第6页浏览型号IPP04CNE8NG的Datasheet PDF文件第7页 
IPB04CNE8N G  
IPP04CNE8N G  
OptiMOS2 Power-Transistor  
Product Summary  
Features  
V DS  
85  
3.9  
100  
V
• N-channel, normal level  
R DS(on),max (TO 263)  
I D  
mΩ  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
•Halogen-free according to IEC61249-2-21  
Type  
IPB04CNE8N G  
IPP04CNE8N G  
Package  
Marking  
PG-TO263-3  
04CNE8N  
PG-TO220-3  
04CNE8N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
100  
100  
A
T C=100 °C  
Pulsed drain current3)  
I D,pulse  
E AS  
T C=25 °C  
400  
I D=100 A, R GS=25 Ω  
Avalanche energy, single pulse  
1000  
mJ  
V
Gate source voltage 4)  
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 1.03  
page 1  
2010-01-13  

与IPP04CNE8NG相关器件

型号 品牌 获取价格 描述 数据表
IPP04N03L INFINEON

获取价格

OptiMOS Buck converter series
IPP04N03LA INFINEON

获取价格

OptiMOS 2 Power-Transistor
IPP04N03LB INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPP04N03LBG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPP04N03LBG_08 INFINEON

获取价格

OptiMOS2 Power-Transistor
IPP04N03LBGHKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Me
IPP050N06L INFINEON

获取价格

OptiMOS㈢ Power-Transistor
IPP050N06LG INFINEON

获取价格

OptiMOS㈢ Power-Transistor
IPP050N06NG INFINEON

获取价格

OptiMOS™ Power-Transistor Features For fast s
IPP050N10NF2S INFINEON

获取价格

Infineon's StrongIRFET™ 2 power MOSFET 100 V