Datasheet > IPD050N03LGATMA1

IPD050N03LGATMA1

更新时间： 2024-09-11 03:28:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	1000K
描述
Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

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IPD050N03LGATMA1 数据手册

Type

IPD050N03L G

IPS050N03L G

IPF050N03L G

IPU050N03L G

OptiMOS^®3 Power-Transistor

Product Summary

Features

V_DS

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

R_DS(on),max

I_D

• N-channel, logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Avalanche rated

• Pb-free plating; RoHS compliant

Type

IPD050N03L G

IPF050N03L G

IPS050N03L G

IPU050N03L G

Package

Marking

PG-TO252-3-11

050N03L

PG-TO252-3-23

050N03L

PG-TO251-3-11

050N03L

PG-TO251-3-21

050N03L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

Continuous drain current

V _GS=10 V, T _C=100 °C

V _GS=4.5 V, T _C=25 °C

V _GS=4.5 V,

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

I _AS

T _C=25 °C

350

Avalanche current, single pulse³⁾

Avalanche energy, single pulse

T _C=25 °C

E _AS

I _D=35 A, R _GS=25 W

I _D=50 A, V _DS=24 V,

di /dt =200 A/µs,

T _j,max=175 °C

Reverse diode dv /dt

dv /dt

kV/µs

V _GS

Gate source voltage

¹⁾J-STD20 and JESD22

±20

Rev. 2.0

page 1

2013-10-28

12 3 4 5 6 7...12

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