型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD068N10N3 G | INFINEON |
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英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM |
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IPD068N10N3G | INFINEON |
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OptiMOS3 Power-Transistor |
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IPD068N10N3G | UMW |
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种类:N-Channel;漏源电压(Vdss):100V;持续漏极电流(Id)(在25°C |
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IPD068N10N3GATMA1 | INFINEON |
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Power Field-Effect Transistor, 90A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, M |
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IPD068N10N3GXT | INFINEON |
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Power Field-Effect Transistor, 90A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, M |
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IPD068P03L3 G | INFINEON |
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Infineon’s highly innovative OptiMOS? familie |
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IPD068P03L3G | INFINEON |
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OptiMOSTM P3 Power-Transistor |
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IPD068P03L3G | UMW |
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种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C |
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IPD068P03L3GATMA1 | INFINEON |
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Power Field-Effect Transistor, 70A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Me |
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IPD06N03L | INFINEON |
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OptiMOS Buck converter series |
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