Datasheet > IPD052N10NF2S

IPD052N10NF2S

更新时间： 2024-10-31 14:55:55

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
11页	1103K
描述
Infineon's StrongIRFET? 2??power MOSFET?100 V features low RDS(on)?of 5.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.?Compared to the previous technology the IPD052N10NF2S achieves 40 percent lower RDS(on)?and over 50 percent Qg?improvement.

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IPD052N10NF2S 数据手册

IPD052N10NF2S

MOSFET

StrongIRFET^TMꢀ2ꢀPower-Transistor

DPAK

tab

Features

•ꢀOptimizedꢀforꢀaꢀwideꢀrangeꢀofꢀapplications

•ꢀN-Channel,ꢀnormalꢀlevel

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Drain

Pin 2, Tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

100

5.2

Unit

Gate

Pin 1

V_DS

R_DS(on),max

I_D

mΩ

Source

Pin 3

118

Q_oss

Q_G

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPD052N10NF2S

PG-TO252-3

052N10NS

Final Data Sheet

Rev.ꢀ2.2,ꢀꢀ2022-10-10

12 3 4 5 6 7...11

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