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IPD052N10NF2S PDF预览

IPD052N10NF2S

更新时间: 2024-11-22 14:55:55
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
11页 1103K
描述
Infineon's StrongIRFET? 2??power MOSFET?100 V features low RDS(on)?of 5.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.?Compared to the previous technology the IPD052N10NF2S achieves 40 percent lower RDS(on)?and over 50 percent Qg?improvement.

IPD052N10NF2S 数据手册

 浏览型号IPD052N10NF2S的Datasheet PDF文件第2页浏览型号IPD052N10NF2S的Datasheet PDF文件第3页浏览型号IPD052N10NF2S的Datasheet PDF文件第4页浏览型号IPD052N10NF2S的Datasheet PDF文件第5页浏览型号IPD052N10NF2S的Datasheet PDF文件第6页浏览型号IPD052N10NF2S的Datasheet PDF文件第7页 
IPD052N10NF2S  
MOSFET  
StrongIRFETTMꢀ2ꢀPower-Transistor  
DPAK  
tab  
Features  
•ꢀOptimizedꢀforꢀaꢀwideꢀrangeꢀofꢀapplications  
•ꢀN-Channel,ꢀnormalꢀlevel  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
2
1
3
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
Drain  
Pin 2, Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
100  
5.2  
Unit  
Gate  
Pin 1  
VDS  
V
RDS(on),max  
ID  
m  
A
Source  
Pin 3  
118  
67  
Qoss  
nC  
nC  
QG  
51  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPD052N10NF2S  
PG-TO252-3  
052N10NS  
-
Final Data Sheet  
1
Rev.ꢀ2.2,ꢀꢀ2022-10-10  

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