5秒后页面跳转
IPD053N06N PDF预览

IPD053N06N

更新时间: 2024-10-30 11:59:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
2页 1021K
描述
New OptiMOS™ 40V and 60V

IPD053N06N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
雪崩能效等级(Eas):60 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):45 A最大漏源导通电阻:0.0053 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):180 A
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPD053N06N 数据手册

 浏览型号IPD053N06N的Datasheet PDF文件第2页 
Product Brief  
Features  
„
Optimized for Synchronous  
Rectification  
New OptiMOS™ 40V and 60V  
„
Shrink Your Design and Boost Efficiency  
35% lower RDS(on) than  
alternative devices  
„
45% improvement of FOM  
over similar devices  
New OptiMOS™ 40V and 60V, Infineon’s latest generation of power MOSFETs,  
is optimized for Synchronous Rectification in switched mode power supplies  
(SMPS) such as those found in servers and desktops. In addition these devices  
are a perfect choice for a broad range of industrial applications including motor  
control, solar micro inverter and fast switching DC/DC converter.  
„
Integrated Schottky-like diode  
„
RoHS compliant - halogen free  
„
MSL1 rated  
Benefits  
„
Highest system efficiency  
New 40V and 60V product families, feature not only the industry’s lowest RDS(on)  
but also a perfect switching behavior for fast switching applications. 35%  
lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg)compared to alternative  
devices has been realized by advanced thin wafer technology.  
„
Less paralleling required  
„
Increased power density  
„
System cost reduction  
„
Very low voltage overshoot  
The fast growing market of solar micro inverter requires ever higher  
performance levels of components. In typical photovoltaic topologies both  
RDS(on) and switching characteristics are equally important. In a micro inverter  
1.5% higher efficiency can be achieved at a 20% load condition by using  
BSC016N06NS (1.6mΩ SuperSO8 (5mmx6mm) 60V device).  
Applications  
„
Synchronous Rectification  
„
Solar micro inverter  
„
Isolated DC/DC converters  
„
Motor control for 12-48V systems  
„
Or-ing switches  
40V SuperSO8  
60V SuperSO8  
2
1
0
2
1
0
Existing OptiMOS™ 40V  
New Generation 40V  
Existing OptiMOS™ 60V  
New Generation 60V  
-41%  
-48%  
40V  
60V  
www.infineon.com/newoptimos  

IPD053N06N 替代型号

型号 品牌 替代类型 描述 数据表
IPD053N06NATMA1 INFINEON

类似代替

Power Field-Effect Transistor, 45A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me
IPD025N06N INFINEON

类似代替

New OptiMOS™ 40V and 60V

与IPD053N06N相关器件

型号 品牌 获取价格 描述 数据表
IPD053N06N3G INFINEON

获取价格

OptiMOS(TM)3 Power-Transistor
IPD053N06N3GBTMA1 INFINEON

获取价格

Power Field-Effect Transistor, 90A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me
IPD053N06NATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 45A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me
IPD053N08N3 G INFINEON

获取价格

OptiMOS™ 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源
IPD053N08N3G INFINEON

获取价格

OptiMOS3 Power-Transistor
IPD053N08N3GBTMA1 INFINEON

获取价格

Power Field-Effect Transistor, 90A I(D), 80V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me
IPD055N08NF2S INFINEON

获取价格

Infineon's StrongIRFET? 2??power MOSFET?80 V features low RDS(on)?of 5.5 mOhm, addressing
IPD05N03LA INFINEON

获取价格

OptiMOS 2 Power-Transistor
IPD05N03LAG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPD05N03LB INFINEON

获取价格

OptiMOS2 Power-Transistor