Datasheet > IPD068P03L3G

IPD068P03L3G

更新时间： 2024-05-23 22:23:41

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	644K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-70A;Vgs(th)(V):±20;漏源导通电阻:6.8mΩ@-10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPD068P03L3G 数据手册

UMW

IPD068P03L3G

-30V P-Channel MOSFET

Features

• 175 °C operating temperature

●

• 100% Avalanche tested

●

• Pb-free; RoHS compliant, halogen free

●

• applications: power management

●

Product Summary

•

VDS (V) =-30V

ID= -70A

•

(V = -10V)

RDS(ON) ＜ 6.8m

RDS(ON) ＜ 11m

Ω(V

=-10V)

•

Ω(V

=-4.5V)

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

-70

Continuous drain current

T _C=100 °C

T _C=25 °C²⁾

I _D,pulse

E _AS

-280

Pulsed drain current

149

I _D=-70 A, R _GS=25 W

Avalanche energy, single pulse

Gate source voltage

V _GS

±20

P _tot

T _C=25 °C

100

Power dissipation

°C

T _j, T _stg

-55 ... 175

tbd

Operating and storage temperature

ESD class

JESD22-A114 HBM

260

Soldering temperature

°C

55/175/56

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

中文翻译

下载PDF

与IPD068P03L3G相关器件

型号	品牌	获取价格	描述	数据表
IPD068P03L3GATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 70A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Me
IPD06N03L	INFINEON	获取价格	OptiMOS Buck converter series
IPD06N03LA	INFINEON	获取价格	OptiMOS 2 Power-Transistor
IPD06N03LAG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPD06N03LAGBUMA1	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 25V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IPD06N03LBG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPD06N03LZG	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 25V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IPD075N03L	INFINEON	获取价格	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
IPD075N03L G	INFINEON	获取价格	极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成
IPD075N03LG	INFINEON	获取价格	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated