Datasheet > IPD068P03L3 G

IPD068P03L3 G

更新时间： 2024-11-23 17:01:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	557K
描述
Infineon’s highly innovative OptiMOS? families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

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IPD068P03L3 G 数据手册

IPD068P03L3 G

OptiMOS^TMP3 Power-Transistor

Product Summary

Features

V_DS

-30

6.8

• single P-Channel in DPAK

R_DS(on),max

V_GS= 10V

V_GS= 4.5V

• Qualified according JEDEC¹⁾for target applications

11.0

-70

• 175 °C operating temperature

I_D

• 100% Avalanche tested

• Pb-free; RoHS compliant, halogen free

• applications: power management

• Halogen-free according to IEC61249-2-21

PG-TO252-3

Type

Package

Marking

Lead free

Yes

Packing

IPD068P03L3 G

PG-TO252-3

068P03L

non dry

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C²⁾

-70

Continuous drain current

I _D,pulse

E_AS

-280

Pulsed drain current

149

I _D=-70 A, R _GS=25 W

Avalanche energy, single pulse

Gate source voltage

V_GS

±20

P_tot

T _C=25 °C

100

Power dissipation

°C

T _j, T _stg

-55 ... 175

tbd

Operating and storage temperature

ESD class

JESD22-A114 HBM

260

Soldering temperature

°C

55/175/56

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

Rev. 2.1

page 1

2014-05-16

12 3 4 5 6 7...9

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