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IPD036N04LGBTMA1 PDF预览

IPD036N04LGBTMA1

更新时间: 2024-11-21 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 155K
描述
Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

IPD036N04LGBTMA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:6.29其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):55 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):90 A最大漏源导通电阻:0.0049 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPD036N04LGBTMA1 数据手册

 浏览型号IPD036N04LGBTMA1的Datasheet PDF文件第2页浏览型号IPD036N04LGBTMA1的Datasheet PDF文件第3页浏览型号IPD036N04LGBTMA1的Datasheet PDF文件第4页浏览型号IPD036N04LGBTMA1的Datasheet PDF文件第5页浏览型号IPD036N04LGBTMA1的Datasheet PDF文件第6页浏览型号IPD036N04LGBTMA1的Datasheet PDF文件第7页 
IPD036N04L G  
OptiMOS®3 Power-Transistor  
Product Summary  
Features  
V DS  
40  
3.6  
90  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
m  
A
• N-channel, logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• 100% Avalanche tested  
• Pb-free plating; RoHS compliant  
Type  
IPD036N04L G  
Package  
Marking  
PG-TO252-3  
036N04L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V GS=10 V, T C=25 °C  
V GS=10 V, T C=100 °C  
Continuous drain current  
90  
87  
90  
A
V GS=4.5 V, T C=25 °C  
V GS=4.5 V,  
T C=100 °C  
75  
Pulsed drain current2)  
I D,pulse  
I AS  
T C=25 °C  
400  
90  
Avalanche current, single pulse3)  
Avalanche energy, single pulse  
Gate source voltage  
T C=25 °C  
E AS  
V GS  
I D=90 A, R GS=25 Ω  
55  
mJ  
V
±20  
1) J-STD20 and JESD22  
Rev. 1.0  
page 1  
2007-12-06  

IPD036N04LGBTMA1 替代型号

型号 品牌 替代类型 描述 数据表
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