型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD050N03L_08 | INFINEON |
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Fast switching MOSFET for SMPS Optimized technology for DC/DC converters | |
IPD050N03LG | INFINEON |
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Fast switching MOSFET for SMPS Optimized technology for DC/DC converters | |
IPD050N03LGATMA1 | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me | |
IPD050N03LGATMA1 | UMW |
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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
IPD050N03LGXT | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me | |
IPD050N10N5 | INFINEON |
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英飞凌的OptiMOS?5 100V功率MOSFET IPD050N10N5专为通信模块中 | |
IPD050N10N5ATMA1 | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Me | |
IPD052N10NF2S | INFINEON |
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Infineon's StrongIRFET? 2??power MOSFET?100 V features low RDS(on)?of 5.2 mOhm, addressing | |
IPD053N06N | INFINEON |
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New OptiMOS⢠40V and 60V | |
IPD053N06N3G | INFINEON |
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OptiMOS(TM)3 Power-Transistor |