Datasheet > IPD038N06NF2S

IPD038N06NF2S

更新时间： 2024-09-11 11:13:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	993K
描述
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 3.85 mOhm, addressing a broad range of applications from low- to high-switching frequency.

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IPD038N06NF2S 数据手册

IPD038N06NF2S

MOSFET

StrongIRFET^TM2ꢀPower-Transistor

DPAK

tab

Features

•ꢀOptimizedꢀforꢀwideꢀrangeꢀofꢀapplications

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Drain

Pin 2, Tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

Gate

Pin 1

V_DS

R_DS(on),max

I_D

3.85

120

mΩ

Source

Pin 3

Q_oss

Q_Gꢀ(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPD038N06NF2S

PG-TO252-3

038N06NS

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-09-20

12 3 4 5 6 7...11

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