Datasheet > IPD038N06NF2S

IPD038N06NF2S

更新时间： 2024-11-19 11:13:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	993K
描述
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 3.85 mOhm, addressing a broad range of applications from low- to high-switching frequency.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPD038N06NF2S 数据手册

IPD038N06NF2S

MOSFET

StrongIRFET^TM2ꢀPower-Transistor

DPAK

tab

Features

•ꢀOptimizedꢀforꢀwideꢀrangeꢀofꢀapplications

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Drain

Pin 2, Tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

Gate

Pin 1

V_DS

R_DS(on),max

I_D

3.85

120

mΩ

Source

Pin 3

Q_oss

Q_Gꢀ(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPD038N06NF2S

PG-TO252-3

038N06NS

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-09-20

12 3 4 5 6 7...11

中文翻译

下载PDF

与IPD038N06NF2S相关器件

型号	品牌	获取价格	描述	数据表
IPD03N03LA	INFINEON	获取价格	Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applicat
IPD03N03LAG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPD03N03LB	INFINEON	获取价格	OptiMOS 2 Power-Transistor
IPD03N03LBG	INFINEON	获取价格	OptiMOS 2 Power-Transistor
IPD040N03L G	INFINEON	获取价格	极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS? 25V 成
IPD040N03LG	INFINEON	获取价格	OptiMOS®3 Power-Transistor Features Excellent
IPD040N03LG_10	INFINEON	获取价格	OptiMOS3 Power-Transistor
IPD040N03LGATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Me
IPD040N08NF2S	INFINEON	获取价格	Infineon's StrongIRFET™ 2 power MOSFET 80 V
IPD042P03L3 G	INFINEON	获取价格	Infineon’s highly innovative OptiMOS™ familie