IPD048N06L3GXT

更新时间： 2024-09-10 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
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IPD048N06L3GXT 数据手册

Type

IPD048N06L3 G

OptiMOS^(TM)3 Power-Transistor

Product Summary

Features

V _DS

4.8

• Ideal for high frequency switching and sync. rec.

• Optimized technology for DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R_DS(on)

R _DS(on),max

I _D

mΩ

• N-channel, logic level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

Type

IPD048N06L3 G

Package

Marking

PG-TO-252-3

048N06L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

360

Avalanche energy, single pulse⁴⁾

I _D=90 A, R _GS=25 Ω

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

115

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾Current is limited by bondwire; with anR _thJC=1.3 K/W the chip is able to carry 115 A.

³⁾See figure 3 for more detailed information

⁴⁾See figure 13 for more detailed information

Rev. 2.0

page 1

2008-12-09

12 3 4 5 6 7...9

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