IPD031N03LG

更新时间： 2024-09-17 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	304K
描述
OptiMOS?3 Power-Transistor

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中文翻译

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数据手册

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IPD031N03LG 数据手册

Type

IPD031N03L G

IPS031N03L G

OptiMOS^™3 Power-Transistor

Features

Product Summary

V _DS

3.1

• Fast switching MOSFET for SMPS

R _DS(on),max

I _D

mΩ

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

• N-channel, logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21 *

Type

IPD031N03L G

IPS031N03L G

• Pb-free plating; RoHS compliant

Package

Marking

PG-TO252-3

031N03L

PG-TO251-3-11

031N03L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

_GS=10 V, T _C=25 °C

Continuous drain current

_GS=10 V, T _C=100 °C

_GS=4.5 V, T _C=25 °C

_GS=4.5 V,

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

I _AS

T _C=25 °C

400

Avalanche current, single pulse³⁾

T _C=25 °C

E _AS

I _D=90 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=90 A, V _DS=24 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

Gate source voltage

¹⁾J-STD20 and JESD22

±20

* IPD031N03L G HF available with SP000680554 only in Malacca, Malaysia

IPS031N03L G available in HF

Rev. 2.1

page 1

2010-04-07

12 3 4 5 6 7...10

中文翻译

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