Datasheet > IPB80P03P4L04ATMA2

IPB80P03P4L04ATMA2

更新时间： 2024-09-30 06:33:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	168K
描述
Power Field-Effect Transistor, TO-263, 3 PIN

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IPB80P03P4L-04

IPI80P03P4L-04, IPP80P03P4L-04

OptiMOS^®-P2 Power-Transistor

Product Summary

V_DS

-30

4.1

-80

_DS(on)(SMD Version)

mΩ

I _D

Features

• P-channel - Logic Level - Enhancement mode

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

• Intended for reverse battery protection

Type

Package

Marking

4P03L04

IPB80P03P4L-04

IPI80P03P4L-04

IPP80P03P4L-04

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

_GS=-10V

Continuous drain current¹⁾

I _D

-80

T _C=100°C,

_GS=-10V²⁾

-80

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

-320

410

I _D=-40A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

-80

V_GS

P_tot

+5/-16

137

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2008-07-29

12 3 4 5 6 7...9

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