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IPB80P04P407ATMA1 PDF预览

IPB80P04P407ATMA1

更新时间: 2024-12-01 09:32:35
品牌 Logo 应用领域
英飞凌 - INFINEON ATM异步传输模式脉冲晶体管
页数 文件大小 规格书
9页 225K
描述
Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

IPB80P04P407ATMA1 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:8.46
Samacsys Description:Infineon IPB80P04P407ATMA1 P-channel MOSFET Transistor, 80 A, -40 V, 3-Pin TO-263雪崩能效等级(Eas):31 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0077 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):320 A表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPB80P04P407ATMA1 数据手册

 浏览型号IPB80P04P407ATMA1的Datasheet PDF文件第2页浏览型号IPB80P04P407ATMA1的Datasheet PDF文件第3页浏览型号IPB80P04P407ATMA1的Datasheet PDF文件第4页浏览型号IPB80P04P407ATMA1的Datasheet PDF文件第5页浏览型号IPB80P04P407ATMA1的Datasheet PDF文件第6页浏览型号IPB80P04P407ATMA1的Datasheet PDF文件第7页 
IPB80P04P4-07  
IPI80P04P4-07, IPP80P04P4-07  
OptiMOS®-P2 Power-Transistor  
Product Summary  
V DS  
-40  
7.4  
-80  
V
R DS(on) (SMD Version)  
mW  
A
I D  
Features  
• P-channel - Normal Level - Enhancement mode  
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green package (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
4P0407  
4P0407  
4P0407  
IPB80P04P4-07  
IPI80P04P4-07  
IPP80P04P4-07  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
T C=25°C,  
V GS=-10V  
Continuous drain current1)  
I D  
-80  
A
T C=100°C,  
V GS=-10V2)  
62  
Pulsed drain current2)  
I D,pulse  
E AS  
I AS  
T C=25°C  
-320  
31  
I D=-40A  
Avalanche energy, single pulse  
Avalanche current, single pulse  
Gate source voltage  
mJ  
A
-
-80  
V GS  
P tot  
-
±20  
V
T C=25 °C  
Power dissipation  
88  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2011-02-14  

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