Datasheet > IPB80P04P4L-08

IPB80P04P4L-08

更新时间： 2024-11-09 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	209K
描述
OptiMOS-P2 Power-Transistor

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中文翻译

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技术参数
数据手册

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IPB80P04P4L-08 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	2.33	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IPB80P04P4L-08 数据手册

IPB80P04P4L-08

IPI80P04P4L-08, IPP80P04P4L-08

OptiMOS^®-P2 Power-Transistor

Product Summary

V _DS

-40

7.9

-80

R _DS(on)(SMD Version)

I _D

Features

• P-channel - Logic Level - Enhancement mode

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

4P04L08

IPB70P04P4L-08

IPI70P04P4L-08

IPP70P04P4L-08

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

V _GS=-10V

Continuous drain current¹⁾

I _D

-80

T _C=100°C,

V _GS=-10V¹⁾

-56

Pulsed drain current²⁾

I _D,pulse

E _AS

I _AS

T _C=25°C

-320

I _D=-40A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

-80

±16²⁾

V _GS

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2011-04-27

12 3 4 5 6 7...9

中文翻译

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