Datasheet > IPB90N04S402XT

IPB90N04S402XT

更新时间： 2024-11-19 10:29:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	158K
描述
Power Field-Effect Transistor, 90A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

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IPB90N04S402XT 数据手册

IPB90N04S4-02

IPI90N04S4-02, IPP90N04S4-02

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

2.1

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

4N0402

IPB90N04S4-02

IPI90N04S4-02

IPP90N04S4-02

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100°C, V_GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

360

475

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=45A

V_GS

P_tot

±20

150

T _C=25°C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 1.1

page 1

2010-07-01

12 3 4 5 6 7...9

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