5秒后页面跳转
IPB80R290C3A PDF预览

IPB80R290C3A

更新时间: 2024-11-19 11:14:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 212K
描述
The CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

IPB80R290C3A 数据手册

 浏览型号IPB80R290C3A的Datasheet PDF文件第2页浏览型号IPB80R290C3A的Datasheet PDF文件第3页浏览型号IPB80R290C3A的Datasheet PDF文件第4页浏览型号IPB80R290C3A的Datasheet PDF文件第5页浏览型号IPB80R290C3A的Datasheet PDF文件第6页浏览型号IPB80R290C3A的Datasheet PDF文件第7页 
IPB80R290C3A  
CoolMOS® Power Transistor  
Product Summary  
VDS  
800  
0.29  
91  
V
R DS(on)max  
Q g,typ  
nC  
Features  
• New revolutionary high voltage technology  
• Ultra low gate charge and ultra low effective capacitances  
• Extreme dv/dt rated  
PG-TO263-3-2  
• High peak current capability  
• Automotive AEC Q101 qualified  
• Green package (RoHS compliant)  
CoolMOS C3A designed for:  
• DC/DC converters for Automotive Applications  
Type  
Package  
Marking  
IPB80R290C3A  
PG-TO263-3-2 8R290C3A  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
17  
11  
Continuous drain current  
A
Pulsed drain current1)  
51  
I D,pulse  
EAS  
EAR  
I AR  
I D=3.4 A, VDD=50 V  
I D=17 A, VDD=50 V  
Avalanche energy, single pulse  
670  
mJ  
1),2)  
1),2)  
0.5  
Avalanche energy, repetitive t AR  
17  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0…640 V  
50  
dv /dt  
VGS  
Ptot  
V/ns  
V
±20  
static  
T C=25 °C  
227  
Power dissipation  
W
T j  
-40 ... 150  
-40 ... 150  
Operating temperature  
Storage temperature  
°C  
T stg  
Rev. 2.0  
page 1  
2009-03-24  

与IPB80R290C3A相关器件

型号 品牌 获取价格 描述 数据表
IPB90N04S4-02 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPB90N04S402ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 90A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Me
IPB90N04S402XT INFINEON

获取价格

Power Field-Effect Transistor, 90A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Me
IPB90N06S4-04 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPB90N06S404ATMA2 INFINEON

获取价格

Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
IPB90N06S4L-04 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPB90N06S4L04ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me
IPB90N06S4L04ATMA2 INFINEON

获取价格

Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me
IPB90R340C3 INFINEON

获取价格

Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Met
IPB90R340C3ATMA2 INFINEON

获取价格

Power Field-Effect Transistor,