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IPB90R340C3 PDF预览

IPB90R340C3

更新时间: 2024-11-18 20:00:47
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 911K
描述
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN

IPB90R340C3 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:compliant风险等级:1.64
Samacsys Description:Infineon IPB90R340C3 N-channel MOSFET Transistor, 15 A, 900 V, 3+Tab-Pin TO-263雪崩能效等级(Eas):678 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (ID):15 A
最大漏源导通电阻:0.34 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):34 A表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPB90R340C3 数据手册

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IPB90R340C3  
CoolMOSPower Transistor  
Features  
Product Summary  
VDS @ TJ=25°C  
RDS(on),max @TJ=25°C  
Qg,typ  
900  
0.34  
94  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
W
nC  
• High peak current capability  
• Qualified according to JEDEC1) for industrial applications  
PG-TO263  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
CoolMOS900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• SMPS  
• PC Silverbox  
• Lighting  
• Solar  
Type  
Package  
Marking  
IPB90R340C3  
PG-TO263  
9R340C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
15  
9.5  
34  
Continuous drain current  
A
Pulsed drain current 2)  
I D,pulse  
E AS  
I D=3.1 A, V DD=50 V  
I D=3.1 A, V DD=50 V  
Avalanche energy, single pulse  
678  
1
mJ  
2),3)  
2),3)  
E AR  
Avalanche energy, repetitive t AR  
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
I AR  
3.1  
50  
A
V DS=0...400 V  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
208  
static  
AC (f>1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T J, T stg  
-55 ... 150  
Operating and storage temperature  
Rev. 2.0  
°C  
page 1  
2012-04-16  

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