是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.7 | Is Samacsys: | N |
雪崩能效等级(Eas): | 331 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 90 A | 最大漏极电流 (ID): | 90 A |
最大漏源导通电阻: | 0.0037 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 最大脉冲漏极电流 (IDM): | 360 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPB037N06N3GATMA1 | INFINEON |
功能相似 |
Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me | |
IPB034N06L3GATMA1 | INFINEON |
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OptiMOS(TM)3 Power-Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB90N06S404ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me | |
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IPB90N06S4L04ATMA1 | INFINEON |
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Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me | |
IPB90R340C3 | INFINEON |
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Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Met | |
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Power Field-Effect Transistor, | |
IPB95R130PFD7 | INFINEON |
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The 950 V CoolMOS? PFD7 superjunction MOSFET | |
IPB95R310PFD7 | INFINEON |
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IPB95R450PFD7 | INFINEON |
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IPBD-02-D | SAMTEC |
获取价格 |
Power Connector, 4 Contact(s), Female, Crimp Terminal, Plug, ROHS COMPLIANT |