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IPB80N06S3L06ATMA1 PDF预览

IPB80N06S3L06ATMA1

更新时间: 2024-01-11 12:26:42
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 185K
描述
Power Field-Effect Transistor, 80A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, TO-263, 3 PIN

IPB80N06S3L06ATMA1 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.62其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0056 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):320 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPB80N06S3L06ATMA1 数据手册

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IPB80N06S3L-06  
IPI80N06S3L-06, IPP80N06S3L-06  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
55  
5.6  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB80N06S3L-06  
IPI80N06S3L-06  
IPP80N06S3L-06  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
3N06L06  
3N06L06  
3N06L06  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
80  
80  
A
V
GS=10 V2)  
Pulsed drain current2)  
Avalanche energy, single pulse2)  
I D,pulse  
EAS  
T C=25 °C  
I D=40 A  
320  
455  
mJ  
A
I AS  
Avalanche current, single pulse  
80  
Gate source voltage3)  
VGS  
±16  
V
Ptot  
T C=25 °C  
Power dissipation  
136  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.1  
page 1  
2007-11-07  

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