Datasheet > IPB80P03P405ATMA2

IPB80P03P405ATMA2

更新时间： 2024-01-20 03:40:17

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	169K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IPB80P03P405ATMA2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.66
Base Number Matches：	1

IPB80P03P405ATMA2 数据手册

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IPB80P03P4-05

IPI80P03P4-05, IPP80P03P4-05

OptiMOS^®-P2 Power-Transistor

Product Summary

V_DS

-30

4.7

-80

_DS(on)(SMD Version)

mΩ

I _D

Features

• P-channel - Normal Level - Enhancement mode

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

4P0305

IPB80P03P4-05

IPI80P03P4-05

IPP80P03P4-05

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

_GS=-10V

Continuous drain current¹⁾

I _D

-80

T _C=100°C,

_GS=-10V²⁾

-80

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

-320

410

I _D=-40A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

-80

V_GS

P_tot

±20

T _C=25 °C

Power dissipation

137

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2008-09-30

12 3 4 5 6 7...9

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