Datasheet > IPB80N06S3L-08_07

IPB80N06S3L-08_07

更新时间： 2024-11-20 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	187K
描述
OptiMOS-T2 Power-Transistor

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数据手册

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IPB80N06S3L-08_07 数据手册

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IPB80N06S3L-08

IPI80N06S3L-08, IPP80N06S3L-08

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

7.6

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPB80N06S3L-08

IPI80N06S3L-08

IPP80N06S3L-08

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

3N06L08

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

_GS=10 V²⁾

Pulsed drain current²⁾

Avalanche energy, single pulse²⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=40 A

320

240

I _AS

Avalanche current, single pulse

Gate source voltage³⁾

V_GS

±16

P_tot

T _C=25 °C

Power dissipation

105

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.1

page 1

2007-11-07

12 3 4 5 6 7...9

中文翻译

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