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IPB80N06S407ATMA1 PDF预览

IPB80N06S407ATMA1

更新时间: 2024-11-18 19:57:39
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
9页 172K
描述
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

IPB80N06S407ATMA1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.61
雪崩能效等级(Eas):71 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0071 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):320 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPB80N06S407ATMA1 数据手册

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IPB80N06S4-07  
IPI80N06S4-07, IPP80N06S4-07  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
60  
7.1  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
4N0607  
4N0607  
4N0607  
IPB80N06S4-07  
IPI80N06S4-07  
IPP80N06S4-07  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
T C=25°C, VGS=10V1)  
I D  
Continuous drain current  
80  
58  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
320  
71  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=40A  
mJ  
A
I AS  
-
80  
VGS  
-
±20  
79  
V
Ptot  
T C=25°C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
Rev. 1.0  
page 1  
2009-03-24  

IPB80N06S407ATMA1 替代型号

型号 品牌 替代类型 描述 数据表
IPB80N06S407ATMA2 INFINEON

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Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Me

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