Datasheet > IPB80N06S3L-08

IPB80N06S3L-08

更新时间： 2024-02-09 09:32:17

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	155K
描述
OptiMOS㈢-T Power-Transistor

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中文翻译

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数据手册

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IPB80N06S3L-08 数据手册

IPB80N06S3L-08

IPI80N06S3L-08, IPP80N06S3L-08

OptiMOS^®-T Power-Transistor

Product Summary

V_DS

Features

7.6

• N-channel - Logic Level - Enhancement mode

_DS(on),max(SMD version)

mΩ

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

I _D

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• Green package (lead free)

• Ultra low Rds(on)

• 100% Avalanche tested

• ESD Class 2 (HBM)

EIA/JESD22-A114-B

Type

Package

Ordering Code Marking

IPB80N06S3L-08

IPI80N06S3L-08

IPP80N06S3L-08

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

SP0000-88128

SP0000-88131

SP0000-88127

3N06L08

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

_GS=10 V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=40 A

320

170

Avalanche energy, single pulse³⁾

Drain gate voltage²⁾

Gate source voltage⁴⁾

V_DG

±16

V_GS

P_tot

T _C=25 °C

Power dissipation

105

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2005-09-16

12 3 4 5 6 7 8

中文翻译

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