Datasheet > IPB80N03S4L-03_10

IPB80N03S4L-03_10

更新时间： 2024-11-21 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	162K
描述
OptiMOS-T2 Power-Transistor

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数据手册

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IPB80N03S4L-03_10 数据手册

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IPB80N03S4L-03

IPI80N03S4L-04, IPP80N03S4L-04

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

3.4

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

4N03L03

4N03L04

IPB80N03S4L-03

IPI80N03S4L-04

IPP80N03S4L-04

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

_GS=10 V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25 °C

320

I _D=80 A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

T _C=25 °C

V_GS

P_tot

±16

T _C=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 2.1

page 1

2010-03-08

12 3 4 5 6 7...9

中文翻译

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