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IPB80N06S2-05 PDF预览

IPB80N06S2-05

更新时间: 2024-01-29 21:27:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 160K
描述
OptiMOS Power-Transistor

IPB80N06S2-05 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6雪崩能效等级(Eas):810 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0048 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPB80N06S2-05 数据手册

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IPB80N06S2-05  
IPP80N06S2-05  
OptiMOS® Power-Transistor  
Product Summary  
Features  
VDS  
55  
4.8  
80  
V
• N-channel - Enhancement mode  
R
DS(on),max (SMD version)  
m  
A
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
Green package (lead free)  
• Ultra low Rds(on)  
I D  
PG-TO263-3-2  
PG-TO220-3-1  
• 100% Avalanche tested  
Type  
Package  
Ordering Code Marking  
IPB80N06S2-05  
IPP80N06S2-05  
PG-TO263-3-2  
PG-TO220-3-1  
SP0002-18877  
SP0002-18873  
2N0605  
2N0605  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
80  
80  
A
V
GS=10 V2)  
Pulsed drain current2)  
Avalanche energy, single pulse2)  
Gate source voltage4)  
I D,pulse  
EAS  
T C=25 °C  
I D= 80 A  
320  
810  
mJ  
V
VGS  
±20  
Ptot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2006-03-13  

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