是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 10 weeks | 风险等级: | 2.31 |
雪崩能效等级(Eas): | 450 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.0077 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 320 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB80N06S2-09 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPB80N06S209ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N06S2-H5 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPB80N06S2H5ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N06S2H5ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N06S2L-05 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPB80N06S2L05ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N06S2L-06 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPB80N06S2L06ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N06S2L06ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me |