5秒后页面跳转
IPB80N04S3-H4 PDF预览

IPB80N04S3-H4

更新时间: 2024-11-18 12:20:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
9页 174K
描述
OptiMOS-T Power-Transistor

IPB80N04S3-H4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.81雪崩能效等级(Eas):370 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0048 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):115 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPB80N04S3-H4 数据手册

 浏览型号IPB80N04S3-H4的Datasheet PDF文件第2页浏览型号IPB80N04S3-H4的Datasheet PDF文件第3页浏览型号IPB80N04S3-H4的Datasheet PDF文件第4页浏览型号IPB80N04S3-H4的Datasheet PDF文件第5页浏览型号IPB80N04S3-H4的Datasheet PDF文件第6页浏览型号IPB80N04S3-H4的Datasheet PDF文件第7页 
IPB80N04S3-H4  
IPI80N04S3-H4, IPP80N04S3-H4  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
40  
4.5  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green package (RoHS compliant)  
• 100% Avalanche tested  
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1  
Type  
Package  
Marking  
3N04H4  
3N04H4  
3N04H4  
IPB80N04S3-H4  
IPI80N04S3-H4  
IPP80N04S3-H4  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
T C=100 °C,  
80  
A
80  
V
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25 °C  
320  
370  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=40 A  
mJ  
A
-
80  
VGS  
Ptot  
-
±20  
V
T C=25 °C  
Power dissipation  
115  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2008-08-01  

IPB80N04S3-H4 替代型号

型号 品牌 替代类型 描述 数据表
IPB039N04LGATMA1 INFINEON

类似代替

Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me
IPD90N04S4-05 INFINEON

功能相似

OptiMOS-T2 Power-Transistor
NP80N04PLG-E1B-AY RENESAS

功能相似

MOS FIELD EFFECT TRANSISTOR

与IPB80N04S3-H4相关器件

型号 品牌 获取价格 描述 数据表
IPB80N04S3H4ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me
IPB80N04S4-03 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPB80N04S403ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Met
IPB80N04S403JEATMA1 INFINEON

获取价格

Power Field-Effect Transistor,
IPB80N04S4-04 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPB80N04S404ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Me
IPB80N04S4L-04 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPB80N06S2-05 INFINEON

获取价格

OptiMOS Power-Transistor
IPB80N06S205ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 55V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me
IPB80N06S2-07 INFINEON

获取价格

OptiMOS Power-Transistor