是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.81 | 雪崩能效等级(Eas): | 370 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 80 A |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.0048 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 115 W |
最大脉冲漏极电流 (IDM): | 320 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPB039N04LGATMA1 | INFINEON |
类似代替 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me | |
IPD90N04S4-05 | INFINEON |
功能相似 |
OptiMOS-T2 Power-Transistor | |
NP80N04PLG-E1B-AY | RENESAS |
功能相似 |
MOS FIELD EFFECT TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB80N04S3H4ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N04S4-03 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPB80N04S403ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Met | |
IPB80N04S403JEATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IPB80N04S4-04 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPB80N04S404ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N04S4L-04 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPB80N06S2-05 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPB80N06S205ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N06S2-07 | INFINEON |
获取价格 |
OptiMOS Power-Transistor |