Datasheet > IPB80N04S4L-04

IPB80N04S4L-04

更新时间： 2024-01-01 20:33:20

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	161K
描述
OptiMOS-T2 Power-Transistor

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中文翻译

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数据手册

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IPB80N04S4L-04 数据手册

IPB80N04S4L-04

IPI80N04S4L-04, IPP80N04S4L-04

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

4.0

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPB80N04S4L-04

IPI80N04S4L-04

IPP80N04S4L-04

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

4N04L04

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

T _C=100°C, V_GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

320

100

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=40A

V_GS

P_tot

+20/-16

T _C=25°C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 1.0

page 1

2010-04-13

12 3 4 5 6 7...9

中文翻译

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