是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 10 weeks | 风险等级: | 1.44 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 810 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 80 A |
最大漏源导通电阻: | 0.0034 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 320 A | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB80N04S2-H4 | INFINEON |
获取价格 |
OptiMOS㈢ Power-Transistor | |
IPB80N04S2-H4_08 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPB80N04S2H4ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N04S2H4ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N04S2L-03 | INFINEON |
获取价格 |
OptiMOS㈢ Power-Transistor | |
IPB80N04S3-03 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPB80N04S303ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N04S3-04 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPB80N04S304ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Me | |
IPB80N04S3-06 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor |