Datasheet > IPB80N04S2-04

IPB80N04S2-04

更新时间： 2024-11-18 03:02:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	161K
描述
OptiMOS㈢ Power-Transistor

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IPB80N04S2-04 数据手册

IPB80N04S2-04

IPP80N04S2-04, IPI80N04S2-04

OptiMOS^®Power-Transistor

Product Summary

V_DS

Features

3.4

• N-channel - Enhancement mode

_DS(on),max(SMD version)

mΩ

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• Ultra low Rds(on)

I _D

PG-TO263-3-2

PG-TO220-3-1

PG-TO262-3-1

• 100% Avalanche tested

Type

Package

Ordering Code Marking

IPB80N04S2-04

IPP80N04S2-04

IPI80N04S2-04

PG-TO263-3-2

PG-TO220-3-1

PG-TO262-3-1

SP0002-18154

SP0002-19054

SP0002-19058

2N0404

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

_GS=10 V²⁾

Pulsed drain current²⁾

Avalanche energy, single pulse²⁾

Gate source voltage⁴⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=80A

320

810

V_GS

±20

P_tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2006-03-02

12 3 4 5 6 7 8

中文翻译

下载PDF

IPB80N04S2-04 替代型号

型号	品牌	替代类型	描述	数据表
IPB80N04S3-03	INFINEON	类似代替	OptiMOS-T Power-Transistor
SPB80N04S2-H4	INFINEON	功能相似	OptiMOS Power-Transistor
SPB80N04S2-04	INFINEON	功能相似	OptiMOS Power-Transistor

与IPB80N04S2-04相关器件

型号	品牌	获取价格	描述	数据表
IPB80N04S204ATMA2	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me
IPB80N04S2-H4	INFINEON	获取价格	OptiMOS㈢ Power-Transistor
IPB80N04S2-H4_08	INFINEON	获取价格	OptiMOS Power-Transistor
IPB80N04S2H4ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
IPB80N04S2H4ATMA2	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
IPB80N04S2L-03	INFINEON	获取价格	OptiMOS㈢ Power-Transistor
IPB80N04S3-03	INFINEON	获取价格	OptiMOS-T Power-Transistor
IPB80N04S303ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
IPB80N04S3-04	INFINEON	获取价格	OptiMOS-T Power-Transistor
IPB80N04S304ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Me