是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.62 |
雪崩能效等级(Eas): | 290 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 650 V |
最大漏极电流 (Abs) (ID): | 13.8 A | 最大漏源导通电阻: | 0.28 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 32 W | 最大脉冲漏极电流 (IDM): | 39 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPA65R280E6_1008 | INFINEON |
获取价格 |
650V CoolMOS E6 Power Transistor | |
IPA65R310CFD | INFINEON |
获取价格 |
650V CoolMOS C6 CFD Power Transistor | |
IPA65R310CFDXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, M | |
IPA65R380C6 | INFINEON |
获取价格 |
650V CoolMOS C6 Power Transistor | |
IPA65R380C6XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, M | |
IPA65R380E6 | INFINEON |
获取价格 |
650V CoolMOS E6 Power Transistor | |
IPA65R400CE | INFINEON |
获取价格 |
||
IPA65R420CFD | INFINEON |
获取价格 |
650V CoolMOS C6 CFD Power Transistor | |
IPA65R600C6 | INFINEON |
获取价格 |
650V CoolMOS C6 Power Transistor | |
IPA65R600C6XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |