是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | Factory Lead Time: | 1 week |
风险等级: | 5.69 | 雪崩能效等级(Eas): | 142 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 650 V | 最大漏极电流 (Abs) (ID): | 7.3 A |
最大漏源导通电阻: | 0.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 28 W |
最大脉冲漏极电流 (IDM): | 18 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPA65R600C6XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IPA65R600E6 | INFINEON |
获取价格 |
650V CoolMOS E6 Power Transistor | |
IPA65R600E6XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IPA65R650CE | INFINEON |
获取价格 |
650V CoolMOS⢠CE Power Transistor | |
IPA65R650CE_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
IPA65R650CE_16 | INFINEON |
获取价格 |
650V CoolMOS⢠CE Power Transistor | |
IPA65R650CEXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IPA65R660CFD | INFINEON |
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650V CoolMOS CFD Power Transistor | |
IPA65R660CFDXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Meta | |
IPA70R360P7S | INFINEON |
获取价格 |
顺应当下和未来反激式拓扑产品的趋势而开发——全新 700V CoolMOS™ P7 超结 |