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IPA90R1K2C3 PDF预览

IPA90R1K2C3

更新时间: 2024-09-15 11:08:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 337K
描述
CoolMOS Power Transistor

IPA90R1K2C3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:1.07
Is Samacsys:N雪崩能效等级(Eas):68 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):5.1 A最大漏极电流 (ID):3.1 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):31 W
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPA90R1K2C3 数据手册

 浏览型号IPA90R1K2C3的Datasheet PDF文件第2页浏览型号IPA90R1K2C3的Datasheet PDF文件第3页浏览型号IPA90R1K2C3的Datasheet PDF文件第4页浏览型号IPA90R1K2C3的Datasheet PDF文件第5页浏览型号IPA90R1K2C3的Datasheet PDF文件第6页浏览型号IPA90R1K2C3的Datasheet PDF文件第7页 
IPA90R1K2C3  
CoolMOSPower Transistor  
Features  
Product Summary  
V
R
DS @ T J=25°C  
900  
1.2  
28  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
DS(on),max @T J=25°C  
Q g,typ  
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO220 FP  
CoolMOS™ 900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• PC Silverbox and consumer applications  
• Industrial SMPS  
Type  
Package  
Marking  
IPA90R1K2C3  
PG TO220 FP  
9R1K2C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
Continuous drain current 2)  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
5.1  
3.2  
A
Pulsed drain current 3)  
10  
I D,pulse  
E AS  
I D=0.92 A, V DD=50 V  
I D=0.92 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
68  
mJ  
3),4)  
3),4)  
E AR  
0.31  
0.92  
50  
I AR  
A
V
DS=0...400 V  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
31  
static  
AC (f>1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T J, T stg  
-55 ... 150  
50  
Operating and storage temperature  
Mounting torque  
°C  
M2.5 screws  
page 1  
Ncm  
Rev. 1.0  
2008-07-29  

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