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IPAN60R125PFD7S PDF预览

IPAN60R125PFD7S

更新时间: 2024-11-19 11:13:27
品牌 Logo 应用领域
英飞凌 - INFINEON 开关二极管
页数 文件大小 规格书
14页 1130K
描述
600V CoolMOS™ PFD7 超结 MOSFET (IPAN60R125PFD7S) 补充了CoolMOS™ 7 系列产品,可用于消费类应用。采用 TO-220 FullPAK 窄引脚封装的 IPAN60R125PFD7S 具有 125mOhm 的 RDS(on) ,降低了开关损耗。该产品配备了快速体二极管,可确保器件坚固耐用,进而为客户减少物料清单(BOM)。

IPAN60R125PFD7S 数据手册

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IPAN60R125PFD7S  
MOSFET  
PG-TOꢀ220ꢀFP  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.  
TheꢀlatestꢀCoolMOS™ꢀPFD7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtarget  
costꢀsensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,  
motorꢀdrive,ꢀlighting,ꢀetc.  
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction  
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof  
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency  
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing  
towardsꢀveryꢀslimꢀdesigns.  
Drain  
Pin 2  
Features  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss  
•ꢀLowꢀswitchingꢀlossesꢀEoss,ꢀexcellentꢀthermalꢀbehavior  
•ꢀFastꢀbodyꢀdiode  
*1  
Gate  
Pin 1  
•ꢀWideꢀrangeꢀportfolioꢀofꢀRDS(on)ꢀandꢀpackageꢀvariations  
Source  
Pin 3  
*1: Internal body diode  
Benefits  
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors  
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies  
•ꢀExcellentꢀcommutationꢀruggedness  
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀandꢀoptimizeꢀtheꢀdesign  
Potentialꢀapplications  
RecommendedꢀforꢀZVSꢀtopologiesꢀusedꢀinꢀhighꢀdensityꢀchargers,  
adapters,ꢀlightingꢀandꢀmotorꢀdrivesꢀapplications,ꢀetc.  
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
650  
125  
36  
Unit  
V
m  
nC  
A
Qg,typ  
ID,pulse  
66  
Eoss @ 400V  
Body diode diF/dt  
ESD Class (HBM)  
4.1  
µJ  
1300  
2
A/µs  
-
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
PG-TO 220 FullPAK -  
Narrow Lead  
IPAN60R125PFD7S  
60S125D7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2019-11-29  

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