Datasheet > IPA90R800C3

IPA90R800C3

更新时间： 2024-11-18 11:08:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	268K
描述
CoolMOS Power Transistor

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中文翻译

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数据手册

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IPA90R800C3 数据手册

IPA90R800C3

CoolMOS^™Power Transistor

Features

Product Summary

_DS@ T _J=25°C

900

0.8

• Lowest figure-of-merit R_ONx Q_g

• Extreme dv/dt rated

_DS(on),max@ T _J= 25°C

Ω

Q _g,typ

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

PG-TO220 FP

CoolMOS™ 900V is designed for:

• Quasi Resonant Flyback / Forward topologies

• PC Silverbox and consumer applications

• Industrial SMPS

Type

Package

Marking

IPA90R800C3

PG-TO220 FP

9R800C

Maximum ratings, at T _J=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

Continuous drain current²⁾

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

6.9

4.4

Pulsed drain current³⁾

I _D,pulse

E _AS

I _D=1.4 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

157

0.46

1.4

3),4)

E _AR

I _AR

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

_DS=0...400 V

dv /dt

V _GS

V/ns

±20

±30

static

AC (f>1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _J, T _stg

-55 ... 150

Operating and storage temperature

Mounting torque

°C

M2.5 screws

page 1

Ncm

Rev. 1.0

2008-07-30

12 3 4 5 6 7...10

中文翻译

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