Datasheet > IPA65R400CE

IPA65R400CE

更新时间： 2024-09-16 14:55:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1096K
描述

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中文翻译

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数据手册

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IPA65R400CE 数据手册

IPA65R400CE

MOSFET

PG-TOꢀ220ꢀFP

650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀseriesꢀcombinesꢀthe

experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.

TheꢀresultingꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction

MOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀand

conductionꢀlossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmore

compact,ꢀlighterꢀandꢀcooler.

Features

•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss

•ꢀVeryꢀhighꢀcommutationꢀruggedness

•ꢀEasyꢀtoꢀuse/drive

Drain

Pin 2, Tab

•ꢀJEDECꢀqualfied,ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound

•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications

Gate

Pin 1

Applications

Source

Pin 3

PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages

forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀLighting

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

I_D.

Value

700

400

15.1

Unit

mΩ

Q_g.typ

I_D,pulse

E_oss@400V

2.8

µJ

Typeꢀ/ꢀOrderingꢀCode

Package

PG-TO 220 FullPAK

Marking

RelatedꢀLinks

IPA65R400CE

65S400CE

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2017-04-19

12 3 4 5 6 7...14

中文翻译

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