IPA60R385CP

更新时间： 2024-09-13 03:44:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	263K
描述
CoolMOS Power Transistor

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中文翻译

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数据手册
替代型号

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IPA60R385CP 数据手册

IPA60R385CP

CoolMOS^TMPower Transistor

Features

Product Summary

_DS@ T_j,max

R _DS(on),max

Q _g,typ

650

0.385

• Lowest figure-of-merit R_ONx Q_G

• Ultra low gate charge

Ω

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

PG-TO220-3-31

• Pb-free lead plating; RoHS compliant

CoolMOS is specially designed for:

• Hard switching SMPS topologies

Type

Package

Ordering Code

Marking

IPA60R385CP

PG-TO220-3-31 SP000089316

6R385P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

9.0

Parameter

Symbol Conditions

Unit

Continuous drain current²⁾

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

5.7

Pulsed drain current³⁾

I _D,pulse

E _AS

I _D=3.4 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

227

0.3

3)4)

E _AR

3),4)

I _AR

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

_DS=0...480 V

dv /dt

V _GS

V/ns

±20

±30

static

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

Mounting torque

°C

M2.5 screws

page 1

Ncm

Rev. 1.5

2006-01-04

12 3 4 5 6 7...10

中文翻译

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IPA60R385CP 替代型号

型号	品牌	替代类型	描述	数据表
FCPF400N60	FAIRCHILD	功能相似	600V N-Channel MOSFET

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