Datasheet > IPA60R460CE

IPA60R460CE

更新时间： 2024-11-06 01:16:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
16页	1241K
描述
600V CoolMOSÂª CE Power Transistor

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中文翻译

获取价格

数据手册

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IPA60R460CE 数据手册

IPD60R460CE,ꢀIPA60R460CE

MOSFET

DPAK

PG-TOꢀ220ꢀFP

600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor

tab

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa

price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive

applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest

efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast

switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand

offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.

Drain

Pin 2, Tab

Gate

Pin 1

Features

•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss

•ꢀVeryꢀhighꢀcommutationꢀruggedness

•ꢀEasyꢀtoꢀuse/drive

Source

Pin 3

•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound

•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications

Applications

PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages

forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.

Pleaseꢀnote:ꢀNote1:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀon

theꢀgateꢀorꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

ꢀꢀꢀꢀNote2:ꢀ*6R460CEꢀisꢀFullꢀPAKꢀmarkingꢀonly

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Id_.

Value

650

460

13.1

Unit

mΩ

Q_g.typ

I_D,pulse

E_oss@400V

2.5

µJ

Typeꢀ/ꢀOrderingꢀCode

IPD60R460CE

Package

Marking

60S460CE / 6R460CE*

RelatedꢀLinks

PG-TO 252

see Appendix A

IPA60R460CE

PG-TO 220 FullPAK

Final Data Sheet

Rev.ꢀ2.2,ꢀꢀ2016-08-08

12 3 4 5 6 7...16

中文翻译

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与IPA60R460CE相关器件

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IPA60R460CE_16	INFINEON	获取价格	600V CoolMOSÂª CE Power Transistor
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IPA60R520C6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
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IPA60R520CP	INFINEON	获取价格	CoolMos Power Transistor
IPA60R520CPXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Me
IPA60R520E6	INFINEON	获取价格	600V CoolMOS E6 Power Transistor
IPA60R520E6XKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IPA60R600C6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
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