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IMD23T110 PDF预览

IMD23T110

更新时间: 2024-09-08 20:08:03
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
5页 80K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SMT6, SC-74, 6 PIN

IMD23T110 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-74
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.8
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
JESD-609代码:e1湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

IMD23T110 数据手册

 浏览型号IMD23T110的Datasheet PDF文件第2页浏览型号IMD23T110的Datasheet PDF文件第3页浏览型号IMD23T110的Datasheet PDF文件第4页浏览型号IMD23T110的Datasheet PDF文件第5页 
IMD23  
Transistors  
General purpose  
(dual digital transistors)  
IMD23  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Both the DTB113Z chip and DTC114E chip in a SMT  
package.  
IMD23  
2) Mounting possible with SMT3 automatic mounting  
machines.  
3) Transistor elements are independent, eliminating  
interference.  
1.6  
2.8  
4) Mounting cost and area can be cut in half.  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT6  
EIAJ : SC-74  
zStructure  
Epitaxial planar type  
Abbreviated symbol : D23  
NPN / PNP silicon transistor (Built-in resistor type)  
zEquivalent circuits  
(4)  
(5)  
(6)  
IMD23  
R2  
DTr1  
R1  
DTr2  
R1  
R2  
(3)  
(2)  
(1)  
DTr  
1
=(R  
1
/R  
2
=1k/10k)  
DTr2=(R  
1/R  
2=10k/10k)  
zAbsolute maximum ratings (Ta=25°C)  
DTr1  
Parameter  
Supply voltage  
Symbol  
Limits  
50  
Unit  
V
V
CC  
IN  
Input voltage  
V
V
10 to +5  
500  
Output current  
I
C
mA  
mW  
°C  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
300(Total)  
150  
Tstg  
55 to +150  
200mW per element must not be a exceeded.  
1/4  

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