IMD3AT110

更新时间： 2024-09-07 22:29:07

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
4页	84K
描述
General purpose (dual digital transistors)

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中文翻译

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数据手册

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IMD3AT110 数据手册

EMD3 / UMD3N / IMD3A

Transistors

General purpose

(dual digital transistors)

EMD3 / UMD3N / IMD3A

zExternal dimensions (Unit : mm)

zFeatures

1) Both the DTA114E chip and DTC114E chip in a EMT

or UMT or SMT package.

EMD3

( )

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

1.2

1.6

3) Transistor elements are independent, eliminating

interference.

Each lead has same dimensions

4) Mounting cost and area can be cut in half.

ROHM : EMT6

Abbreviated symbol : D3

UMD3N

zStructure

Epitaxial planar type

1.25

2.1

NPN / PNP silicon transistor (Built-in resistor type)

0.1Min.

Each lead has same dimensions

The following characteristics apply to both the DTr1 and

DTr2, however, the “−” sign on DTr2 values for the PNP

type have been omitted.

ROHM

EIAJ

UMT6

SC-88

Abbreviated symbol : D3

IMD3A

zEquivalent circuits

1.6

2.8

EMD3 / UMD3N

IMD3A

(4) (5) (6)

(3) (2) (1)

DTr

0.3to0.6

DTr2

Each lead has same dimensions

=10kΩ

ROHM

EIAJ

SMT6

SC-74

(3) (2) (1)

(4) (5) (6)

Abbreviated symbol : D3

zAbsolute maximum ratings (Ta=25°C)

Limits

Parameter

Symbol

Unit

Supply voltage

−10

Input voltage

VIN

Output current

C (Max.)

100

EMD3, UMD3N

150 (TOTAL)

300 (TOTAL)

150

∗

Power

dissipation

IMD3A

Junction temperature

Storage temperature

˚C

Tstg

−55∼+150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

Rev.A

1/3

12 3 4

中文翻译

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