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IMD6AT148 PDF预览

IMD6AT148

更新时间: 2024-09-08 19:28:43
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
2页 66K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-74, 6 PIN

IMD6AT148 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-74
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G6JESD-609代码:e1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

IMD6AT148 数据手册

 浏览型号IMD6AT148的Datasheet PDF文件第2页 
EMD6 / UMD6N / IMD6A  
Transistors  
General purpose  
(dual digital transistors)  
EMD6 / UMD6N / IMD6A  
!Features  
!External dimensions (Units : mm)  
1) Both the DTA143T chip and DTC143T chip in an EMT  
or UMT or SMT package.  
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
EMD6  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
3) Transistor elements are independent, eliminating  
interference.  
Each lead has same dimensions  
4) Mounting cost and area can be cut in half.  
ROHM : EMT6  
EMD6N  
Abbreviated symbol : D6  
!Structure  
A PNP and NPN digital transistor  
(each with a single built in resistor)  
1.25  
2.1  
The following characteristics apply to both the DTr1 and  
DTr2, however, the “ ” sign on DTr2 values for the PNP  
type have been omitted.  
0.1Min.  
Each lead has same dimensions  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol : D6  
!Equivalent circuit  
IMD6A  
EMD6 / UMD6N  
IMD6A  
(4) (5) (6)  
R
(3) (2) (1)  
R
1
1
DTr1  
DTr1  
DTr2  
DTr2  
1.6  
2.8  
R1=4.7k  
R1=4.7kΩ  
R
1
R
1
(3) (2) (1)  
(4) (5) (6)  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT6  
EIAJ : SC-74  
!Absolute maximum ratings (Ta = 25°C)  
Abbreviated symbol : D6  
Limits  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Unit  
V
VCBO  
VCEO  
VEBO  
50  
50  
V
5
V
I
C
100  
mA  
Collector  
power  
dissipation  
1
2
EMD6, UMD6N  
150 (TOTAL)  
300 (TOTAL)  
150  
P
C
mW  
IMD6A  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55∼+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  

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