是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.49 | 其他特性: | DIGITAL, BUILT IN BIAS RESISTOR |
最大集电极电流 (IC): | 0.03 A | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 56 |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e1 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN AND PNP | 最大功率耗散 (Abs): | 0.3 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IMD2AFRAT108 | ROHM |
获取价格 |
Small Signal Bipolar Transistor |
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IMD2AT108 | ROHM |
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General purpose (dual digital transistors) |
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IMD2AT109 | ROHM |
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Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon |
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IMD2AT110 | ROHM |
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General purpose (dual digital transistors) |
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IMD3 | ETC |
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TRANSISTOR | SO |
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IMD-30-G | SAMTEC |
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Board Connector, 60 Contact(s), 2 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal |
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IMD-31-T | SAMTEC |
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Board Connector, 62 Contact(s), 2 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal |
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IMD3A | ROHM |
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General purpose (dual digital transistors) |
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IMD3AFRAT108 | ROHM |
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Small Signal Bipolar Transistor, |
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IMD3AT108 | RENESAS |
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General purpose (Dual digital transistors) |
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