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IMD2A PDF预览

IMD2A

更新时间: 2024-09-07 22:33:47
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
4页 85K
描述
General purpose (dual digital transistors)

IMD2A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.49其他特性:DIGITAL, BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):56
JESD-30 代码:R-PDSO-G6JESD-609代码:e1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IMD2A 数据手册

 浏览型号IMD2A的Datasheet PDF文件第2页浏览型号IMD2A的Datasheet PDF文件第3页浏览型号IMD2A的Datasheet PDF文件第4页 
EMD2 / UMD2N / IMD2A  
Transistors  
General purpose  
(dual digital transistors)  
EMD2 / UMD2N / IMD2A  
zFeatures  
zExternal dimensions (Unit : mm)  
1) Both the DTA124E chip and DTC124E chip in a EMT  
or UMT or SMT package.  
EMD2  
2) Mounting possible with EMT6 or UMT6 or SMT6  
automatic mounting machines.  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
3) Transistor elements are independent, eliminating  
interference.  
4) Mounting cost and area can be cut in half.  
Each lead has same dimensions  
ROHM : EMT6  
UMD2N  
Abbreviated symbol : D2  
zStructure  
Epitaxial planar type  
NPN / PNP silicon transistor (Built-in resistor type)  
1.25  
2.1  
The following characteristics apply to both the DTr1 and  
DTr2, however, the “” sign on DTr2 values for the PNP  
type have been omitted.  
0.1Min.  
Each lead has same dimensions  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol : D2  
zEquivalent circuit  
IMD2A  
EMD2 / UMD2N  
IMD2A  
(4) (5) (6)  
R
(3) (2) (1)  
R
1
R2  
1
R2  
1.6  
2.8  
DTr  
1
DTr  
1
DTr2  
DTr2  
R
1
=22kΩ  
=22kΩ  
R
1
=22kΩ  
=22kΩ  
R2  
R
2
R1  
R2  
R2  
R1  
(3) (2) (1)  
(4) (5) (6)  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT6  
EIAJ : SC-74  
zAbsolute maximum ratings (Ta = 25°C)  
Abbreviated symbol : D2  
Limits  
Parameter  
Supply voltage  
Symbol  
Unit  
V
V
CC  
50  
40  
Input voltage  
VIN  
V
10  
30  
I
O
Output current  
mA  
I
C (Max.)  
100  
1
2
EMD2, UMD2N  
150 (TOTAL)  
300 (TOTAL)  
150  
mW  
Power  
dissipation  
Pd  
IMD2A  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Rev.A  
1/3  

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